PN2222A,412 datasheet

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О ДАТАШИТЕ

• Маркировка
  PN2222A,412
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors PN2222A,412 Current - Collector (ic) (max): 600mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 300MHz Mounting Type: Through Hole Package / Case: TO-92-3 (Standard Body), TO-226 Power - Max: 500mW Series: - Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 1V @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 40V Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 75 V Collector- Emitter Voltage VCEO Max: 40 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 0.6 A Gain Bandwidth Product fT: 300 MHz (Min) DC Collector/Base Gain hfe Min: 100 at 150 mA at 10 V, 35 at 0.1 mA at 10 V, 50 at 1 mA at 10 V, 75 at 10 mA at 10 V, 50 at 150 mA at 1 V, 40 at 500 mA at 10 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Maximum Power Dissipation: 500 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 1000 Other Names: 568-3992, 933488950412, PN2222A
• Количество страниц
  7 шт.
• Форматы файла
  HTML, PDF

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